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VS-GB50YF120N
VS-GB50YF120N
IGBT Modules VS-GB50YF120N
Vishay
VS-GB50YF120N
--
Diodes, Transistors and Thyristors
IGBT Modules
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
Pin Count11
AutomotiveNo
TechnologyNPT
PCB changed11
Part StatusObsolete
Channel TypeN
ConfigurationQuade
Package Width45.4
Package Height17
Package Length107.8
Supplier PackageECONO2 4PAK
Maximum Power Dissipation (mW)330000
Maximum Gate Emitter Voltage (V)±20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Collector-Emitter Voltage (V)1200
Maximum Continuous Collector Current (A)66
Maximum Gate Emitter Leakage Current (uA)0.2
Description
Trans IGBT Module N-CH 1200V 66A 330000mW 11-Pin ECONO2 4PAK
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