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2N6770
2N6770
MOSFETs 2N6770
Infineon
2N6770
--
Diodes, Transistors and Thyristors
MOSFETs
2N6770.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width25.53(Max)
Package Height7.74(Max)
Package Length39.37(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3
Maximum IDSS (uA)25
Standard Package NameTO-204-AA
Typical Fall Time (ns)130(Max)
Typical Rise Time (ns)190(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)120(Max)
Typical Gate Charge @ Vgs (nC)120(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35(Max)
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)170(Max)
Maximum Diode Forward Voltage (V)1.7
Typical Gate to Drain Charge (nC)70(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)19(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-55 to 150
Maximum Drain Source Resistance (mOhm)500@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)48
Description
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3
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