Product Attribute | Attribute Value |
HTS | 8541.21.00.95 |
PPAP | No |
EU RoHS | Not Compliant |
Diameter | 9.22(Max) |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Height | 4.54(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-39 |
Process Technology | HEXFET |
Standard Package Name | TO-205-AF |
Typical Fall Time (ns) | 80(Max) |
Typical Rise Time (ns) | 100(Max) |
Supplier Temperature Grade | Military |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 25000 |
Typical Gate Charge @ 10V (nC) | 34.8(Max) |
Typical Gate Charge @ Vgs (nC) | 34.8(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 50(Max) |
Maximum Drain Source Voltage (V) | 200 |
Typical Turn-Off Delay Time (ns) | 100(Max) |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4 |
Typical Input Capacitance @ Vds (pF) | 700@25V |
Maximum Drain Source Resistance (MOhm) | 1680@10V |
Description |