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2N7002DW-7-F
2N7002DW-7-F
MOSFETs 2N7002DW-7-F
Diodes Incorporated
2N7002DW-7-F
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Diodes, Transistors and Thyristors
MOSFETs
2N7002DW-7-F.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategorySmall Signal
Supplier PackageSOT-363
Maximum IDSS (uA)1
Standard Package NameSOT
Supplier Temperature GradeCommercial
Number of Elements per Chip2
Maximum Power Dissipation (mW)400
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)11
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)11
Maximum Diode Forward Voltage (V)1.5
Typical Diode Forward Voltage (V)0.78
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.23
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)22@25V
Maximum Drain Source Resistance (mOhm)7500@5V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.8
Maximum Power Dissipation on PCB @ TC=25°C (W)0.4
Typical Reverse Transfer Capacitance @ Vds (pF)2@25V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)0.23
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)318
Description
Trans MOSFET N-CH 60V 0.23A 6-Pin SOT-363 T/R
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