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2SK3072-TB-E
2SK3072-TB-E
MOSFETs 2SK3072-TB-E
onsemi
2SK3072-TB-E
--
Diodes, Transistors and Thyristors
MOSFETs
2SK3072-TB-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.5
Package Height1.1
Package Length2.9
Product CategorySmall Signal
Supplier PackageCP
Maximum IDSS (uA)10
Typical Fall Time (ns)1200
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)250
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)450
Typical Turn-Off Delay Time (ns)110
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.03
Operating Junction Temperature (°C)150
Typical Input Capacitance @ Vds (pF)20@20V
Maximum Drain Source Resistance (MOhm)275000@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 450V 0.03A 3-Pin CP
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