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MOSFETs 2SK4177-DL-1E
onsemi
2SK4177-DL-1E
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 9.2 |
| Package Height | 4.5 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 100 |
| Standard Package Name | TO-263 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 59 |
| Typical Rise Time (ns) | 37 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 80000 |
| Typical Gate Charge @ 10V (nC) | 37.5 |
| Typical Gate Charge @ Vgs (nC) | 37.5@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 70 |
| Typical Turn-On Delay Time (ns) | 12 |
| Maximum Drain Source Voltage (V) | 1500 |
| Typical Gate Plateau Voltage (V) | 5.3 |
| Typical Turn-Off Delay Time (ns) | 152 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.88 |
| Typical Gate to Drain Charge (nC) | 20 |
| Typical Gate to Source Charge (nC) | 2.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 380@30V |
| Maximum Drain Source Resistance (MOhm) | 13000@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 4 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 40@30V |
| Description |
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