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3LN01C-TB-E
3LN01C-TB-E
MOSFETs 3LN01C-TB-E
onsemi
3LN01C-TB-E
--
Diodes, Transistors and Thyristors
MOSFETs
3LN01C-TB-E.pdf
Specification
Product AttributeAttribute Value
HTS8541410000
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.65(Max)
Package Height1.25(Max)
Package Length3.05(Max)
Product CategoryPower MOSFET
Supplier PackageSC-59
Maximum IDSS (uA)1
Standard Package NameSC
Typical Fall Time (ns)120
Typical Rise Time (ns)65
Number of Elements per Chip1
Maximum Power Dissipation (mW)250
Typical Gate Charge @ 10V (nC)1.58
Typical Gate Charge @ Vgs (nC)1.58@10V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)19
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)155
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.15
Typical Input Capacitance @ Vds (pF)7@10V
Maximum Drain Source Resistance (MOhm)3700@4V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 30V 0.15A 3-Pin SC-59 T/R
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