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568-9495-1-ND
568-9495-1-ND
MOSFETs 568-9495-1-ND
NXP
568-9495-1-ND
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)10
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)34
Typical Rise Time (ns)46
Number of Elements per Chip1
Maximum Power Dissipation (mW)306000
Typical Gate Charge @ 10V (nC)141|130
Typical Gate Charge @ Vgs (nC)141@10V|130@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)31
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)83
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)8061@50V
Maximum Drain Source Resistance (MOhm)5.6@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) D2PAK T/R
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