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CPH6350-TL-W
CPH6350-TL-W
MOSFETs CPH6350-TL-W
onsemi
CPH6350-TL-W
--
Diodes, Transistors and Thyristors
MOSFETs
CPH6350-TL-W.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.9
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageCPH
Maximum IDSS (uA)1
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)45
Typical Rise Time (ns)27
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)13
Typical Gate Charge @ Vgs (nC)13@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)145
Typical Turn-On Delay Time (ns)7.4
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)62
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.87
Typical Gate to Drain Charge (nC)3.2
Typical Gate to Source Charge (nC)1.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)600@10V
Maximum Drain Source Resistance (mOhm)43@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)24
Typical Reverse Transfer Capacitance @ Vds (pF)110@10V
Description
Trans MOSFET P-CH 30V 6A 6-Pin CPH T/R
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