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MOSFETs APT7F100S
Microchip Technology
APT7F100S
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Automotive | No |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | D3PAK |
| Maximum IDSS (uA) | 250 |
| Process Technology | Power MOS 8 |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 26 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 290000 |
| Typical Gate Charge @ 10V (nC) | 58 |
| Typical Gate Charge @ Vgs (nC) | 58@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 24 |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Turn-Off Delay Time (ns) | 77 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7 |
| Typical Input Capacitance @ Vds (pF) | 1800@25V |
| Maximum Drain Source Resistance (MOhm) | 2000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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