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APT80SM120S
APT80SM120S
MOSFETs APT80SM120S
Microchip Technology
APT80SM120S
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Diodes, Transistors and Thyristors
MOSFETs
APT80SM120S.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageD3PAK
Maximum IDSS (uA)100
Typical Fall Time (ns)19|22
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Typical Gate Charge @ Vgs (nC)235@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)11|13
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)42|48
Maximum Gate Threshold Voltage (V)2.5(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)80
Typical Input Capacitance @ Vds (pF)4600@1000V
Maximum Drain Source Resistance (MOhm)55@20V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 1.2KV 80A D3PAK Tube
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