Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | SiC |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Automotive | No |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Supplier Package | D3PAK |
Maximum IDSS (uA) | 100 |
Typical Fall Time (ns) | 19|22 |
Typical Rise Time (ns) | 9 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 625000 |
Typical Gate Charge @ Vgs (nC) | 235@20V |
Maximum Gate Source Voltage (V) | 25 |
Typical Turn-On Delay Time (ns) | 11|13 |
Maximum Drain Source Voltage (V) | 1200 |
Typical Turn-Off Delay Time (ns) | 42|48 |
Maximum Gate Threshold Voltage (V) | 2.5(Typ) |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 80 |
Typical Input Capacitance @ Vds (pF) | 4600@1000V |
Maximum Drain Source Resistance (MOhm) | 55@20V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |