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APTM100DSK35T3G
APTM100DSK35T3G
MOSFETs APTM100DSK35T3G
Microchip Technology
APTM100DSK35T3G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingScrew
ECCN (US)EAR99
PackagingTube
Pin Count32
AutomotiveNo
PCB changed32
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width40.8
Package Height11.5
Package Length73.4
Product CategoryPower MOSFET
Supplier PackageCase SP-3
Typical Fall Time (ns)40
Typical Rise Time (ns)12
Number of Elements per Chip2
Maximum Power Dissipation (mW)390000
Typical Gate Charge @ 10V (nC)186
Typical Gate Charge @ Vgs (nC)186@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)1000
Typical Turn-Off Delay Time (ns)155
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)22
Typical Input Capacitance @ Vds (pF)5200@25V
Maximum Drain Source Resistance (MOhm)420@10V
Description
Trans MOSFET N-CH 1KV 22A 32-Pin Case SP-3 Tube
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