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MOSFETs APTM100H46FT3G
Microchip Technology
APTM100H46FT3G
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 20 |
| Automotive | No |
| PCB changed | 20 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Quad |
| Package Width | 40.8 |
| Package Height | 11.5 |
| Package Length | 73.4 |
| Product Category | Power MOSFET |
| Supplier Package | Case SP-3 |
| Maximum IDSS (uA) | 250 |
| Typical Fall Time (ns) | 35 |
| Typical Rise Time (ns) | 37 |
| Number of Elements per Chip | 4 |
| Maximum Power Dissipation (mW) | 357000 |
| Typical Gate Charge @ 10V (nC) | 260 |
| Typical Gate Charge @ Vgs (nC) | 260@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 36 |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Turn-Off Delay Time (ns) | 140 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 19 |
| Typical Input Capacitance @ Vds (pF) | 6800@25V |
| Maximum Drain Source Resistance (MOhm) | 552@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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