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IPB147N03LGATMA1
IPB147N03LGATMA1
MOSFETs IPB147N03LGATMA1
Infineon
IPB147N03LGATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.45(Max)
Package Height4.57(Max)
Package Length10.31(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyOptiMOS
Standard Package NameTO-263
Typical Fall Time (ns)2
Typical Rise Time (ns)2.4
Typical Switch Charge (nC)2.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)31000
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)4.8@4.5V|10@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)350
Typical Turn-On Delay Time (ns)3.1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)12
Typical Gate to Drain Charge (nC)1.2
Maximum Gate Threshold Voltage (V)2.2
Typical Gate to Source Charge (nC)2.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)770@15V
Typical Reverse Recovery Charge (nC)10(Max)
Maximum Drain Source Resistance (MOhm)14.7@10V
Description
Trans MOSFET N-CH 30V 20A 3-Pin(2+Tab) D2PAK T/R
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