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MOSFETs APTM100TA35SCTPG
Microchip Technology
APTM100TA35SCTPG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Hex |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 100 |
| Process Technology | MOS 7 |
| Typical Fall Time (ns) | 40 |
| Typical Rise Time (ns) | 12 |
| Number of Elements per Chip | 6 |
| Maximum Power Dissipation (mW) | 390000 |
| Typical Gate Charge @ 10V (nC) | 186 |
| Typical Gate Charge @ Vgs (nC) | 186@10V |
| Maximum Gate Source Voltage (V) | ±30 |
| Typical Turn-On Delay Time (ns) | 18 |
| Maximum Drain Source Voltage (V) | 1000 |
| Typical Turn-Off Delay Time (ns) | 155 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 22 |
| Typical Input Capacitance @ Vds (pF) | 5200@25V |
| Maximum Drain Source Resistance (MOhm) | 420@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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