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MOSFETs APTMC170AM30CT1AG
Microchip Technology
APTMC170AM30CT1AG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)200
Typical Fall Time (ns)55
Typical Rise Time (ns)75
Number of Elements per Chip2
Maximum Power Dissipation (mW)700000
Typical Gate Charge @ Vgs (nC)380@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)105
Maximum Drain Source Voltage (V)1700
Typical Turn-Off Delay Time (ns)210
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)6160@1000V
Maximum Drain Source Resistance (MOhm)35@20V
Maximum Gate Source Leakage Current (nA)1200
Description
Trans MOSFET N-CH SiC 1.7KV 100A Tube
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