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APTSM120AM14CD3AG
APTSM120AM14CD3AG
MOSFETs APTSM120AM14CD3AG
Microchip Technology
APTSM120AM14CD3AG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingScrew
ECCN (US)EAR99
Pin Count11
AutomotiveNo
PCB changed11
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width62
Package Height30.5
Package Length108
Product CategoryPower MOSFET
Maximum IDSS (uA)600
Typical Fall Time (ns)30
Typical Rise Time (ns)10
Number of Elements per Chip2
Maximum Power Dissipation (mW)1430000
Typical Gate Charge @ Vgs (nC)816@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)45
Maximum Gate Threshold Voltage (V)3(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)225
Typical Input Capacitance @ Vds (pF)15400@1000V
Maximum Drain Source Resistance (MOhm)17@20V
Maximum Gate Source Leakage Current (nA)600
Description
Trans MOSFET N-CH SiC 1.2KV 225A 11-Pin
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