Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | Unknown |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | Yes |
Lead Shape | Gull-wing |
PCB changed | 2 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 9.65(Max) |
Package Height | 4.83(Max) |
Package Length | 10.67(Max) |
Product Category | Power MOSFET |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 50 |
Process Technology | HEXFET |
Standard Package Name | TO-263 |
Typical Fall Time (ns) | 55 |
Typical Rise Time (ns) | 63 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3100 |
Typical Gate Charge @ 10V (nC) | 150 |
Typical Gate Charge @ Vgs (nC) | 150@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 14 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 72 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 38 |
Typical Input Capacitance @ Vds (pF) | 2780@25V |
Maximum Drain Source Resistance (mOhm) | 60@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |