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MOSFETs AUIRFS8409-7P
Infineon
AUIRFS8409-7P
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 7 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Package Width | 9.65(Max) |
| Package Height | 4.83(Max) |
| Package Length | 10.67(Max) |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | HEXFET |
| Standard Package Name | TO-263 |
| Typical Fall Time (ns) | 107 |
| Typical Rise Time (ns) | 148 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ 10V (nC) | 305 |
| Typical Gate Charge @ Vgs (nC) | 305@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 32 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 149 |
| Maximum Gate Threshold Voltage (V) | 3.9 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 522 |
| Typical Input Capacitance @ Vds (pF) | 13975@25V |
| Maximum Drain Source Resistance (mOhm) | 0.75@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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