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FQD4N25TM-WS
FQD4N25TM-WS
MOSFETs FQD4N25TM-WS
onsemi
FQD4N25TM-WS
--
Diodes, Transistors and Thyristors
MOSFETs
FQD4N25TM-WS.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)22
Typical Rise Time (ns)45
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)4.3
Typical Gate Charge @ Vgs (nC)4.3@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)6.8
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)6.4
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)155@25V
Maximum Drain Source Resistance (MOhm)1750@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 250V 3A 3-Pin(2+Tab) DPAK T/R
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