Product Attribute | Attribute Value |
PPAP | Unknown |
EU RoHS | Compliant |
Material | Si |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | Yes |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 25 |
Process Technology | HEXFET |
Typical Fall Time (ns) | 29 |
Typical Rise Time (ns) | 74 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 3800 |
Typical Gate Charge @ Vgs (nC) | 15(Max)@5V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Turn-On Delay Time (ns) | 7.1 |
Maximum Drain Source Voltage (V) | 55 |
Typical Turn-Off Delay Time (ns) | 20 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 18 |
Typical Input Capacitance @ Vds (pF) | 480@25V |
Maximum Drain Source Resistance (mOhm) | 60@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |