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NTD4856NT4G
NTD4856NT4G
MOSFETs NTD4856NT4G
onsemi
NTD4856NT4G
--
Diodes, Transistors and Thyristors
MOSFETs
NTD4856NT4G.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4|7.5
Typical Rise Time (ns)17.5|22.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2140
Typical Gate Charge @ 10V (nC)38
Typical Gate Charge @ Vgs (nC)38@10V|18@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)567
Typical Turn-On Delay Time (ns)15.7|8.7
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)27.2|18.6
Typical Gate to Drain Charge (nC)6.6
Maximum Gate Threshold Voltage (V)2.5
Typical Gate to Source Charge (nC)6.7
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16.8
Typical Input Capacitance @ Vds (pF)2241@12V
Typical Reverse Recovery Charge (nC)8
Maximum Drain Source Resistance (mOhm)4.7@10V
Description
Trans MOSFET N-CH 25V 16.8A 3-Pin(2+Tab) DPAK T/R
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