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BSC0911ND
BSC0911ND
MOSFETs BSC0911ND
Infineon
BSC0911ND
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Diodes, Transistors and Thyristors
MOSFETs
BSC0911ND.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Product CategoryPower MOSFET
Maximum IDSS (uA)1@Q 1|500@Q 2
Process TechnologyOptiMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.2@Q 1|4@Q 2
Typical Rise Time (ns)2.8@Q 1|5.4@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)7.7@4.5V@Q1|25@4.5V@Q2
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)3.3@Q 1|3.8@Q 2
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)15@Q 1|25@Q 2
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18@Q 1|30@Q 2
Typical Input Capacitance @ Vds (pF)1200@12V@Q 1|3800@12V@Q 2
Maximum Drain Source Resistance (MOhm)3.2@10V@Q 1|1.2@10V@Q 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 18A/30A T/R
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