Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Part Status | Unconfirmed |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1@Q 1|500@Q 2 |
Process Technology | OptiMOS |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 2.2@Q 1|4@Q 2 |
Typical Rise Time (ns) | 2.8@Q 1|5.4@Q 2 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ Vgs (nC) | 7.7@4.5V@Q1|25@4.5V@Q2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 3.3@Q 1|3.8@Q 2 |
Maximum Drain Source Voltage (V) | 25 |
Typical Turn-Off Delay Time (ns) | 15@Q 1|25@Q 2 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 18@Q 1|30@Q 2 |
Typical Input Capacitance @ Vds (pF) | 1200@12V@Q 1|3800@12V@Q 2 |
Maximum Drain Source Resistance (MOhm) | 3.2@10V@Q 1|1.2@10V@Q 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |