PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Dual |
Package Width | 6.1(Max) |
Package Height | 1.1(Max) |
Package Length | 5.1(Max) |
Product Category | Power MOSFET |
Supplier Package | TISON EP |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS |
Standard Package Name | SON |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 2.4@Q 1|3.6@Q 2 |
Typical Rise Time (ns) | 3.4@Q 1|5@Q 2 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 2 |
Maximum Gate Resistance (Ohm) | 1@Q 2|1.4@Q 1 |
Minimum Gate Resistance (Ohm) | 0.3@Q 2|0.4@Q 1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ Vgs (nC) | 5.9@4.5V@Q 1|22@4.5V@Q 2 |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 1100@Q 2|300@Q 1 |
Typical Turn-On Delay Time (ns) | 1.8@Q 1|5@Q 2 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 2.5@Q 2|2.8@Q 1 |
Typical Turn-Off Delay Time (ns) | 12@Q 1|25@Q 2 |
Maximum Diode Forward Voltage (V) | 0.7@Q 2|1@Q 1 |
Typical Diode Forward Voltage (V) | 0.56@Q 2|0.9@Q 1 |
Typical Gate to Drain Charge (nC) | 7@Q 2|1.9@Q 1 |
Maximum Gate Threshold Voltage (V) | 2 |
Minimum Gate Threshold Voltage (V) | 1.2 |
Typical Gate to Source Charge (nC) | 6.7@Q 2|2.2@Q 1 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 17@Q 1|31@Q 2 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 770@15V@Q 1|2700@15V@Q 2 |
Typical Reverse Recovery Charge (nC) | 5 |
Maximum Drain Source Resistance (mOhm) | 5@10V@Q 1|1.6@10V@Q 2 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 160 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 1 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 150@15V@Q 2|44@15V@Q 1 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 31@Q 2|17@Q 1 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 125 |
Description | |