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IPD090N03LGATMA1
IPD090N03LGATMA1
MOSFETs IPD090N03LGATMA1
Infineon
IPD090N03LGATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.41(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyOptiMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2.6
Typical Rise Time (ns)3
Typical Switch Charge (nC)3.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)42000
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)7.4@4.5V|15@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)500
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.4
Typical Turn-Off Delay Time (ns)15
Maximum Diode Forward Voltage (V)1.1
Typical Diode Forward Voltage (V)0.91
Typical Gate to Drain Charge (nC)1.8
Maximum Gate Threshold Voltage (V)2.2
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)40
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1200@15V
Maximum Drain Source Resistance (MOhm)9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)280
Typical Reverse Transfer Capacitance @ Vds (pF)24@15V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)75
Description
Trans MOSFET N-CH 30V 40A 3-Pin(2+Tab) DPAK T/R
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