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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSD840N H6327
BSD840N H6327
MOSFETs BSD840N H6327
Infineon
BSD840N H6327
--
Diodes, Transistors and Thyristors
MOSFETs
BSD840N H6327.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.25
Package Height0.9(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSOT-363
Process TechnologyOptiMOS
Standard Package NameSOT
Typical Fall Time (ns)0.9
Typical Rise Time (ns)2.2
Number of Elements per Chip2
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)0.26@2.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)1.9
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)7.8
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.88
Typical Input Capacitance @ Vds (pF)55@10V
Maximum Drain Source Resistance (MOhm)400@2.5V
Description
Trans MOSFET N-CH 20V 0.88A Automotive 6-Pin SOT-363 T/R
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