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MOSFETs BSG0811NDATMA1
Infineon
BSG0811NDATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6.1(Max) |
| Package Height | 1.1(Max) |
| Package Length | 5.1(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TISON EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 5 |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 1.4@Q 1|2.6@Q 2 |
| Typical Rise Time (ns) | 4.7@Q 1|4.3@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 1.2 |
| Maximum Power Dissipation (mW) | 6250 |
| Typical Gate Charge @ Vgs (nC) | 5.6@4.5V@Q 1|20@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Output Capacitance (pF) | 390@Q 1|1400@Q 2 |
| Typical Turn-On Delay Time (ns) | 4.3@Q 1|5.6@Q 2 |
| Maximum Drain Source Voltage (V) | 25 |
| Typical Gate Plateau Voltage (V) | 2.6@Q 1|2.3@Q 2 |
| Typical Turn-Off Delay Time (ns) | 4.3@Q 1|8.8@Q 2 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Diode Forward Voltage (V) | 0.84@Q 1|0.77@Q 2 |
| Typical Gate to Drain Charge (nC) | 1.4@Q 1|4.7@Q 2 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Minimum Gate Threshold Voltage (V) | 1.2 |
| Typical Gate Threshold Voltage (V) | 1.6 |
| Typical Gate to Source Charge (nC) | 2@Q 1|6.4@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 31@Q 1|50@Q 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 780@12V@Q 1|2700@12V@Q 2 |
| Typical Reverse Recovery Charge (nC) | 10@Q 1|20@Q 2 |
| Maximum Drain Source Resistance (MOhm) | 3@10V@Q 1|0.8@10V@Q 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 16 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 160 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 6.25 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 38@12V@Q 1|130@12V@Q 2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Description |
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