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IRLML6302TR
IRLML6302TR
MOSFETs IRLML6302TR
Infineon
IRLML6302TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRLML6302TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.4(Max)
Package Height1.02(Max)
Package Length3.04(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Process TechnologyHEXFET
Standard Package NameSOT
Typical Fall Time (ns)22
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)540
Typical Gate Charge @ Vgs (nC)2.4@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)53
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)22
Typical Gate to Drain Charge (nC)1
Maximum Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)0.56
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.78
Typical Input Capacitance @ Vds (pF)97@15V
Typical Reverse Recovery Charge (nC)26
Maximum Drain Source Resistance (mOhm)600@4.5V
Description
Trans MOSFET P-CH 20V 0.78A 3-Pin SOT-23 T/R
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