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MOSFETs BSL215C L6327
Infineon
BSL215C L6327
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Product Category | Small Signal |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 2|OptiMOS-P 2 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 1.4@N Channel|14@P Channel |
| Typical Rise Time (ns) | 9.7@P Channel|7.6@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 0.73@4.5V@N Channel|3@5V@P Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 4.1@N Channel|6.7@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 6.8@N Channel|14.5@P Channel |
| Maximum Gate Threshold Voltage (V) | 0.6@P Channel|1.2@N Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.5 |
| Typical Input Capacitance @ Vds (pF) | 110@10V@N Channel|270@10V@P Channel |
| Maximum Drain Source Resistance (mOhm) | 140@4.5V@N Channel|150@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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