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MOSFETs BSL308CH6327XTSA1
Infineon
BSL308CH6327XTSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Product Category | Small Signal |
| Supplier Package | TSOP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS P3|OptiMOS 2 |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 1.4@N Channel|2.8@P Channel |
| Typical Rise Time (ns) | 2.3@N Channel|7.7@P Channel |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ 10V (nC) | 1.5@N Channel|5@P Channel |
| Typical Gate Charge @ Vgs (nC) | 1.5@10V@N Channel|5@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 4.4@N Channel|5.6@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 8.3@N Channel|15.3@P Channel |
| Maximum Gate Threshold Voltage (V) | 2@N Channel|1@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.3@N Channel|2@P Channel |
| Typical Input Capacitance @ Vds (pF) | 207@15V@N Channel|376@15V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 57@10V@N Channel|80@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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