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MOSFETs BSL316C H6327
Infineon
BSL316C H6327
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Product Category | Small Signal |
| Supplier Package | TSOP |
| Process Technology | OptiMOS |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 1@N Channel|7.5@P Channel |
| Typical Rise Time (ns) | 2.3@N Channel|6.5@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 0.6@5V@N Channel|2.4@5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3.4@N Channel|5@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 5.8@N Channel|14.3@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.4@N Channel|1.5@P Channel |
| Typical Input Capacitance @ Vds (pF) | 71@15V@N Channel|212@15V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 160@10V@N Channel|150@10V@P Channel |
| Description |
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