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MOSFETs BSL316CH6327XTSA1
Infineon
BSL316CH6327XTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1(Max) |
| Package Length | 2.9 |
| Product Category | Small Signal |
| Supplier Package | TSOP |
| Process Technology | OptiMOS |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 7.5@P Channel|1@N Channel |
| Typical Rise Time (ns) | 6.5@P Channel|2.3@N Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ Vgs (nC) | 0.6@5V@N Channel|2.4@5V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 26@N Channel|69@P Channel |
| Typical Turn-On Delay Time (ns) | 5@P Channel|3.4@N Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 5.8@N Channel|14.3@P Channel |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Maximum Gate Threshold Voltage (V) | 1@P Channel|2@N Channe |
| Minimum Gate Threshold Voltage (V) | 2@P Channel|1.2@N Channe |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.4@N Channel|1.5@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 71@15V@N Channel|212@15V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 150@10V@P Channel|160@10V@N Channel |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6@P Channel|5.6@N Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 250 |
| Description |
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