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IRF7379QPBF
IRF7379QPBF
MOSFETs IRF7379QPBF
Infineon
IRF7379QPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7379QPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)7.7@N Channel|18@P Channel
Typical Rise Time (ns)21@N Channel|17@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)25(Max)
Typical Gate Charge @ Vgs (nC)25(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.8@N Channel|11@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)22@N Channel|25@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.8@N Channel|4.3@P Channel
Typical Input Capacitance @ Vds (pF)520@25V@N Channel|440@25V@P Channel
Maximum Drain Source Resistance (mOhm)90@10V@P Channel|45@10V@N Channel
Description
Trans MOSFET N/P-CH Si 30V 5.8A/4.3A 8-Pin SOIC
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