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MOSFETs BSO613SPVGXUMA1
Infineon
BSO613SPVGXUMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.94 |
| Package Height | 1.47 |
| Package Length | 4.9 |
| Product Category | Small Signal |
| Supplier Package | DSO |
| Process Technology | SIPMOS |
| Typical Fall Time (ns) | 12 |
| Typical Rise Time (ns) | 11 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Typical Gate Charge @ 10V (nC) | 20 |
| Typical Gate Charge @ Vgs (nC) | 20@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 32 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.44 |
| Typical Input Capacitance @ Vds (pF) | 700@25V |
| Maximum Drain Source Resistance (MOhm) | 130@10V |
| Description |
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