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BSP123 L6327
BSP123 L6327
MOSFETs BSP123 L6327
Infineon
BSP123 L6327
--
Diodes, Transistors and Thyristors
MOSFETs
BSP123 L6327.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.6
Package Length6.5
Product CategorySmall Signal
Supplier PackageSOT-223
Maximum IDSS (uA)0.01
Process TechnologySIPMOS
Standard Package NameSOT
Typical Fall Time (ns)9.4
Typical Rise Time (ns)3.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)1790
Typical Gate Charge @ 10V (nC)1.6
Typical Gate Charge @ Vgs (nC)1.6@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)9
Typical Turn-On Delay Time (ns)3.3
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)8.7
Typical Gate to Drain Charge (nC)0.8
Maximum Gate Threshold Voltage (V)1.8
Typical Gate to Source Charge (nC)0.09
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.37
Typical Input Capacitance @ Vds (pF)56@25V
Typical Reverse Recovery Charge (nC)17.8
Maximum Drain Source Resistance (MOhm)6000@10V
Maximum Gate Source Leakage Current (nA)10
Description
Trans MOSFET N-CH 100V 0.37A Automotive 4-Pin(3+Tab) SOT-223 T/R
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