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BSP250,135
BSP250,135
MOSFETs BSP250,135
Nexperia
BSP250,135
--
Diodes, Transistors and Thyristors
MOSFETs
BSP250,135.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width3.7(Max)
Package Height1.7(Max)
Package Length6.7(Max)
Product CategoryPower MOSFET
Supplier PackageSC-73
Maximum IDSS (uA)0.1
Process TechnologyDMOS
Number of Elements per Chip1
Maximum Power Dissipation (mW)1650
Typical Gate Charge @ 10V (nC)10
Typical Gate Charge @ Vgs (nC)10@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)140
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.9
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)3
Maximum Gate Threshold Voltage (V)2.8
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)1
Typical Reverse Recovery Time (ns)150
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)3
Operating Junction Temperature (°C)150
Typical Input Capacitance @ Vds (pF)250@20V
Maximum Drain Source Resistance (mOhm)250@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)12
Maximum Power Dissipation on PCB @ TC=25°C (W)1.65
Typical Reverse Transfer Capacitance @ Vds (pF)50@20V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)75
Description
Trans MOSFET P-CH 30V 3A 4-Pin(3+Tab) SC-73 T/R
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