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MOSFETs BSP372E6327T
Infineon
BSP372E6327T
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Drain |
| Product Category | Small Signal |
| Process Technology | SIPMOS |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 35 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1800 |
| Maximum Gate Source Voltage (V) | ±14 |
| Typical Output Capacitance (pF) | 80 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 110 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1.7@Ta=28C |
| Typical Input Capacitance @ Vds (pF) | 415@25V |
| Typical Reverse Recovery Charge (nC) | 110 |
| Maximum Drain Source Resistance (MOhm) | 310@5V |
| Description |
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