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IRFU220N
IRFU220N
MOSFETs IRFU220N
Infineon
IRFU220N
--
Diodes, Transistors and Thyristors
MOSFETs
IRFU220N.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.3
Package Height6.1
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageIPAK
Process TechnologyHEXFET
Standard Package NameTO-251
Typical Fall Time (ns)12
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)43000
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6.4
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)300@25V
Maximum Drain Source Resistance (mOhm)600@10V
Description
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK Tube
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