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BSS123LT1G
BSS123LT1G
MOSFETs BSS123LT1G
onsemi
BSS123LT1G
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Diodes, Transistors and Thyristors
MOSFETs
BSS123LT1G.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)15
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)225
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)9
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)3.2
Typical Turn-Off Delay Time (ns)40
Maximum Diode Forward Voltage (V)1.3
Maximum Gate Threshold Voltage (V)2.6
Minimum Gate Threshold Voltage (V)1.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.17
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)20@25V
Maximum Drain Source Resistance (MOhm)6000@10V
Maximum Gate Source Leakage Current (nA)50
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.68
Maximum Power Dissipation on PCB @ TC=25°C (W)0.225
Typical Reverse Transfer Capacitance @ Vds (pF)4@25V
Description
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
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