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BSS126H6327XTSA2
BSS126H6327XTSA2
MOSFETs BSS126H6327XTSA2
Infineon
BSS126H6327XTSA2
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Maximum IDSS (uA)7000(Min)
Process TechnologySIPMOS
Standard Package NameSOT
Typical Fall Time (ns)115
Typical Rise Time (ns)9.7
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ Vgs (nC)1.4@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)2.4
Typical Turn-On Delay Time (ns)6.1
Maximum Drain Source Voltage (V)600
Typical Gate Plateau Voltage (V)0.1
Typical Turn-Off Delay Time (ns)14
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.81
Typical Gate to Drain Charge (nC)1.2
Maximum Gate Threshold Voltage (V)1.6
Minimum Gate Threshold Voltage (V)2.7
Typical Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)0.05
Typical Reverse Recovery Time (ns)160
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.021
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)21@25V
Typical Reverse Recovery Charge (nC)13.2
Maximum Drain Source Resistance (mOhm)500000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.085
Typical Reverse Transfer Capacitance @ Vds (pF)1@25V
Description
Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R
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