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2N7002 L6327
2N7002 L6327
MOSFETs 2N7002 L6327
Infineon
2N7002 L6327
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Diodes, Transistors and Thyristors
MOSFETs
2N7002 L6327.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Product CategorySmall Signal
Supplier PackageSOT-23
Process TechnologyOptiMOS
Standard Package NameSOT-23
Typical Fall Time (ns)3.1
Typical Rise Time (ns)3.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)500
Typical Gate Charge @ 10V (nC)0.4
Typical Gate Charge @ Vgs (nC)0.4@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)4.1
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4
Typical Turn-Off Delay Time (ns)5.5
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.96
Typical Gate to Drain Charge (nC)0.2
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1.5
Typical Gate Threshold Voltage (V)2.1
Typical Gate to Source Charge (nC)0.05
Typical Reverse Recovery Time (ns)8.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)13@25V
Typical Reverse Recovery Charge (nC)2.4
Maximum Drain Source Resistance (mOhm)3000@10V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1.2
Maximum Power Dissipation on PCB @ TC=25°C (W)0.5
Typical Reverse Transfer Capacitance @ Vds (pF)2@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)250
Description
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R
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