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MOSFETs BSS138WQ-13-F
Diodes Incorporated
BSS138WQ-13-F
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 9 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 500 |
| Typical Gate Charge @ 10V (nC) | 1.5 |
| Typical Gate Charge @ Vgs (nC) | 1.5@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 3 |
| Maximum Drain Source Voltage (V) | 50 |
| Typical Turn-Off Delay Time (ns) | 43 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.28 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 48@25V |
| Maximum Drain Source Resistance (mOhm) | 3500@10V |
| Description |
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