HTS | 8541.29.00.95 |
PPAP | Unknown |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | Yes |
Lead Shape | Gull-wing |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Depletion |
Channel Type | N |
Configuration | Single |
Package Width | 1.3 |
Package Height | 1(Max) |
Package Length | 2.9 |
Product Category | Small Signal |
Supplier Package | SOT-23 |
Maximum IDSS (uA) | 30000(Min) |
Process Technology | SIPMOS |
Standard Package Name | SOT |
Typical Fall Time (ns) | 182 |
Typical Rise Time (ns) | 5.4 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 360 |
Typical Gate Charge @ Vgs (nC) | 2.3@5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 6.7 |
Typical Turn-On Delay Time (ns) | 5.8 |
Maximum Drain Source Voltage (V) | 250 |
Typical Gate Plateau Voltage (V) | 0.28 |
Typical Turn-Off Delay Time (ns) | 29 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.81 |
Typical Gate to Drain Charge (nC) | 1.3 |
Maximum Gate Threshold Voltage (V) | 1 |
Minimum Gate Threshold Voltage (V) | 2.1 |
Typical Gate Threshold Voltage (V) | 1.4 |
Typical Gate to Source Charge (nC) | 0.14 |
Typical Reverse Recovery Time (ns) | 8.6 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 0.1 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 60@25V |
Typical Reverse Recovery Charge (nC) | 2.1 |
Maximum Drain Source Resistance (MOhm) | 14000@10V |
Maximum Gate Source Leakage Current (nA) | 10 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 0.4 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 2.6@25V |
Description | |