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BSS192,115
BSS192,115
MOSFETs BSS192,115
Nexperia
BSS192,115
--
Diodes, Transistors and Thyristors
MOSFETs
BSS192,115.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusNRND
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-89
Process TechnologyDMOS
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)240
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.2
Typical Input Capacitance @ Vds (pF)55@25V
Maximum Drain Source Resistance (mOhm)12000@10V
Description
Trans MOSFET P-CH 240V 0.2A 4-Pin(3+Tab) SOT-89 T/R
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