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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SIR1309DP-T1-GE3
SIR1309DP-T1-GE3
MOSFETs SIR1309DP-T1-GE3
Vishay
SIR1309DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
SIR1309DP-T1-GE3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET Gen IV
Typical Fall Time (ns)20|8
Typical Rise Time (ns)67|7
Number of Elements per Chip1
Maximum Power Dissipation (mW)4800
Typical Gate Charge @ 10V (nC)58
Typical Gate Charge @ Vgs (nC)58@10V|28@4.5V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)26|12
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)30|40
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19.1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)3250@15V
Maximum Drain Source Resistance (mOhm)7.3@10V
Description
Trans MOSFET P-CH 30V 19.1A T/R
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