Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen IV |
Typical Fall Time (ns) | 20|8 |
Typical Rise Time (ns) | 67|7 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 4800 |
Typical Gate Charge @ 10V (nC) | 58 |
Typical Gate Charge @ Vgs (nC) | 58@10V|28@4.5V |
Maximum Gate Source Voltage (V) | ±25 |
Typical Turn-On Delay Time (ns) | 26|12 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 30|40 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 19.1 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 3250@15V |
Maximum Drain Source Resistance (mOhm) | 7.3@10V |
Description |