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MOSFETs BSS192P H6327
Infineon
BSS192P H6327
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Dual Drain |
| Package Width | 2.5 |
| Package Height | 1.5 |
| Package Length | 4.5 |
| Product Category | Small Signal |
| Supplier Package | SOT-89 |
| Maximum IDSS (uA) | 0.2 |
| Process Technology | SIPMOS |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 50 |
| Typical Rise Time (ns) | 5.2 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ 10V (nC) | 4.9 |
| Typical Gate Charge @ Vgs (nC) | 4.9@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 4.7 |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Turn-Off Delay Time (ns) | 72 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.19 |
| Typical Input Capacitance @ Vds (pF) | 83@25V |
| Maximum Drain Source Resistance (MOhm) | 12000@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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