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MOSFETs BSZ086P03NS3EGATMA1
Infineon
BSZ086P03NS3EGATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.3 |
| Package Height | 1 |
| Package Length | 3.3 |
| Product Category | Power MOSFET |
| Supplier Package | TSDSON EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 46 |
| Typical Switch Charge (nC) | 18.4 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 69000 |
| Typical Gate Charge @ 10V (nC) | 43.2 |
| Typical Gate Charge @ Vgs (nC) | 43.2@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Output Capacitance (pF) | 1520 |
| Typical Turn-On Delay Time (ns) | 16 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 4.5 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Maximum Diode Forward Voltage (V) | 1.1 |
| Typical Gate to Drain Charge (nC) | 7.4 |
| Maximum Gate Threshold Voltage (V) | 1.9 |
| Minimum Gate Threshold Voltage (V) | 3.1 |
| Typical Gate Threshold Voltage (V) | 2.5 |
| Typical Gate to Source Charge (nC) | 16.1 |
| Typical Reverse Recovery Time (ns) | 39 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 3190@15V |
| Typical Reverse Recovery Charge (nC) | 34 |
| Maximum Drain Source Resistance (mOhm) | 8.6@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 25 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 160 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.1 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 110@15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 13.5 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 60 |
| Description |
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