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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SI4816BDY-T1-E3
SI4816BDY-T1-E3
MOSFETs SI4816BDY-T1-E3
Vishay
SI4816BDY-T1-E3
--
Diodes, Transistors and Thyristors
MOSFETs
SI4816BDY-T1-E3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width4(Max)
Package Height1.55(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Standard Package NameSOP
Typical Fall Time (ns)11@Channel 2|9@Channel 1
Typical Rise Time (ns)9
Number of Elements per Chip2
Maximum Power Dissipation (mW)2400@Channel 2|1400@Channel 1
Typical Gate Charge @ Vgs (nC)11.6@5V@Channel 2|7.8@5V@Channel 1
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)13@Channel 2|11@Channel 1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)31@Channel 2|24@Channel 1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.2@Channel 2|5.8@Channel 1
Maximum Drain Source Resistance (mOhm)11.5@10V@Channel 2|18.5@10V@Channel 1
Description
Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R
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