Tab | Tab |
PPAP | Unknown |
SVHC | Yes |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 4 |
Automotive | Yes |
Lead Shape | Gull-wing |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
Package Width | 3.7(Max) |
Package Height | 1.7(Max) |
Package Length | 6.7(Max) |
Product Category | Power MOSFET |
Supplier Package | SC-73 |
Maximum IDSS (uA) | 10 |
Process Technology | TMOS |
Standard Package Name | SC |
Typical Fall Time (ns) | 13 |
Typical Rise Time (ns) | 57 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 8000 |
Typical Gate Charge @ Vgs (nC) | 5.3@5V |
Maximum Gate Source Voltage (V) | ±15 |
Typical Output Capacitance (pF) | 53 |
Typical Turn-On Delay Time (ns) | 8 |
Maximum Drain Source Voltage (V) | 55 |
Typical Gate Plateau Voltage (V) | 3.2 |
Typical Turn-Off Delay Time (ns) | 16 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.85 |
Typical Gate to Drain Charge (nC) | 2.8 |
Maximum Gate Threshold Voltage (V) | 2 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate Threshold Voltage (V) | 1.5 |
Typical Gate to Source Charge (nC) | 1 |
Typical Reverse Recovery Time (ns) | 24 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 5.5 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 240@25V |
Typical Reverse Recovery Charge (nC) | 30 |
Maximum Drain Source Resistance (mOhm) | 137@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 15 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 22 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 40@25V |
Description | |