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IRF7726
IRF7726
MOSFETs IRF7726
Infineon
IRF7726
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7726.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width3
Package Height0.86
Package Length3
Product CategoryPower MOSFET
Supplier PackageMicro
Process TechnologyHEXFET
Typical Fall Time (ns)107
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)1790
Typical Gate Charge @ 10V (nC)46
Typical Gate Charge @ Vgs (nC)46@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)227
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)2204@25V
Maximum Drain Source Resistance (MOhm)26@10V
Description
Trans MOSFET P-CH Si 30V 7A 8-Pin Micro T/R
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